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| TP5335 Low Threshold Product Objective Specification P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -350V RDS(ON) (max) 30 VGS(th) (max) -2.4V Order Number/Package TO-236AB* TP5335K1 Wafer TP5335NW Product marking for SOT-23 P3S Where *=2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Logic level interfaces - ideal for TTL and CMOS Solid state relays Analog switches Power Management Telecom switches Drain Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSS BVDGS 20V -55C to +150C 300C Gate Source TO-236AB (SOT-23) top view Note: See Package Outline section for dimensions. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TP5335 Thermal Characteristics Package SOT-23 ID (continuous)* -85mA ID (pulsed) -400mA Power Dissipation @ TA = 25C 0.36W jc ja IDR* -85mA IDRM -400mA C/W 200 C/W 350 * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min -350 -1.0 Typ Max -2.4 4.5 -100 -10 -1.0 -5.0 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Unit V V mV/C nA A mA nA mA Conditions VGS = 0V, ID = -100A VGS = VDS, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 0V, VDS = -330V VGS = -4.5V, VDS = -25V VGS = -10V, VDS = -25V VGS = -4.5V, ID = -150mA VGS = -10V, ID = -200mA VGS = -10V, ID = -200mA VDS = -25V, ID = -200mA VGS = 0V, VDS = -25V f = 1 MHz ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time -200 -400 75 30 1.7 125 110 60 22 20 15 25 25 -1.8 800 %/C m pF ns V ns Switching Waveforms and Test Circuit 0V 10% INPUT -10V PULSE GENERATOR 90% t(ON) Rgen t(OFF) tr td(OFF) tF INPUT td(ON) 0V 90% OUTPUT VDD 90% 10% 10% (c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 2 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com VDD = -25V ID = -150mA RGEN = 25 VGS = 0V, ISD = -200mA VGS = 0V, ISD = -200mA D.U.T. OUTPUT RL VDD 11/12/01 |
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